Red-blue effect in Cu(In,Ga)Se2-based devices revisited
Identifieur interne : 000606 ( Main/Repository ); précédent : 000605; suivant : 000607Red-blue effect in Cu(In,Ga)Se2-based devices revisited
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Abstract
The controversial issue of a source for the fill factor losses in Cu(In,Ga)Se2-based solar cells observed under red light is discussed. Experimental evidence is presented that removal of the fill factor loss by blue light is accompanied by a decrease in capacitance. Similar kinetics for both effects are observed. This effect is demonstrated not only on CdS-buffered devices but also on Zn(O,S)- and In2S3-buffered cells. The explanation, supported by simulations, is based on a model of a reduction of the p + layer by holes photogenerated in the buffer. This effect might be differentiated from the effect of a photosensitive secondary barrier in the buffer-window part of the junction by a sign of the capacitance change under blue light.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Red-blue effect in Cu(In,Ga)Se<sub>2</sub>-based devices revisited</title><author><name sortKey="Igalson, M" uniqKey="Igalson M">M. Igalson</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Warsaw University of Technology, Faculty of Physics, Koszykowa 75</s1><s2>00-662 Warszawa</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>00-662 Warszawa</wicri:noRegion></affiliation></author><author><name sortKey="Urbaniak, A" uniqKey="Urbaniak A">A. Urbaniak</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Warsaw University of Technology, Faculty of Physics, Koszykowa 75</s1><s2>00-662 Warszawa</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>00-662 Warszawa</wicri:noRegion></affiliation></author><author><name sortKey="Zabierowski, P" uniqKey="Zabierowski P">P. Zabierowski</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Warsaw University of Technology, Faculty of Physics, Koszykowa 75</s1><s2>00-662 Warszawa</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>00-662 Warszawa</wicri:noRegion></affiliation></author><author><name sortKey="Maksoud, H Abdel" uniqKey="Maksoud H">H. Abdel Maksoud</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Warsaw University of Technology, Faculty of Physics, Koszykowa 75</s1><s2>00-662 Warszawa</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>00-662 Warszawa</wicri:noRegion></affiliation></author><author><name sortKey="Buffiere, M" uniqKey="Buffiere M">M. Buffiere</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229</s1><s2>44322 Nantes</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Pays de la Loire</region><settlement type="city">Nantes</settlement></placeName><orgName type="university">Université de Nantes</orgName></affiliation></author><author><name sortKey="Barreau, N" uniqKey="Barreau N">N. Barreau</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229</s1><s2>44322 Nantes</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Pays de la Loire</region><settlement type="city">Nantes</settlement></placeName><orgName type="university">Université de Nantes</orgName></affiliation></author><author><name sortKey="Spiering, S" uniqKey="Spiering S">S. Spiering</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Zentrum fur Sonnenenergie-und Wasserstoff-Forschung (ZSW) Baden-Württemberg, Industriestrasse 6</s1><s2>70565 Stuttgart</s2><s3>DEU</s3><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>70565 Stuttgart</wicri:noRegion><wicri:noRegion>Industriestrasse 6</wicri:noRegion><wicri:noRegion>70565 Stuttgart</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0229213</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0229213 INIST</idno><idno type="RBID">Pascal:13-0229213</idno><idno type="wicri:Area/Main/Corpus">000B14</idno><idno type="wicri:Area/Main/Repository">000606</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cadmium sulfide</term><term>Capacitance</term><term>Copper</term><term>Copper selenides</term><term>Gallium</term><term>Gallium selenides</term><term>Indium selenides</term><term>Indium sulfide</term><term>Numerical simulation</term><term>Solar cell</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Cellule solaire</term><term>Capacité électrique</term><term>Simulation numérique</term><term>Séléniure de gallium</term><term>Séléniure d'indium</term><term>Cuivre</term><term>Gallium</term><term>Sulfure de cadmium</term><term>Sulfure d'indium</term><term>Séléniure de cuivre</term><term>CdS</term><term>In2S3</term><term>8460J</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The controversial issue of a source for the fill factor losses in Cu(In,Ga)Se<sub>2</sub>-based solar cells observed under red light is discussed. Experimental evidence is presented that removal of the fill factor loss by blue light is accompanied by a decrease in capacitance. Similar kinetics for both effects are observed. This effect is demonstrated not only on CdS-buffered devices but also on Zn(O,S)- and In<sub>2</sub>S<sub>3</sub>-buffered cells. The explanation, supported by simulations, is based on a model of a reduction of the p + layer by holes photogenerated in the buffer. This effect might be differentiated from the effect of a photosensitive secondary barrier in the buffer-window part of the junction by a sign of the capacitance change under blue light.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>535</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Red-blue effect in Cu(In,Ga)Se<sub>2</sub>-based devices revisited</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>E-MRS 2012 Symposium B</s1></fA09><fA11 i1="01" i2="1"><s1>IGALSON (M.)</s1></fA11><fA11 i1="02" i2="1"><s1>URBANIAK (A.)</s1></fA11><fA11 i1="03" i2="1"><s1>ZABIEROWSKI (P.)</s1></fA11><fA11 i1="04" i2="1"><s1>MAKSOUD (H. Abdel)</s1></fA11><fA11 i1="05" i2="1"><s1>BUFFIERE (M.)</s1></fA11><fA11 i1="06" i2="1"><s1>BARREAU (N.)</s1></fA11><fA11 i1="07" i2="1"><s1>SPIERING (S.)</s1></fA11><fA12 i1="01" i2="1"><s1>EDOFF (Marika)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>ROMEO (Alessandro)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>SCHEER (Roland)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>SHAFARMAN (William)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>KATAGIRI (Hirono)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Warsaw University of Technology, Faculty of Physics, Koszykowa 75</s1><s2>00-662 Warszawa</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229</s1><s2>44322 Nantes</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="03"><s1>Zentrum fur Sonnenenergie-und Wasserstoff-Forschung (ZSW) Baden-Württemberg, Industriestrasse 6</s1><s2>70565 Stuttgart</s2><s3>DEU</s3><sZ>7 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>European Materials Research Society (E-MRS)</s1><s2>Strasbourg</s2><s3>FRA</s3><s9>org-cong.</s9></fA18><fA20><s1>302-306</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000504170550660</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>17 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0229213</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The controversial issue of a source for the fill factor losses in Cu(In,Ga)Se<sub>2</sub>-based solar cells observed under red light is discussed. Experimental evidence is presented that removal of the fill factor loss by blue light is accompanied by a decrease in capacitance. Similar kinetics for both effects are observed. This effect is demonstrated not only on CdS-buffered devices but also on Zn(O,S)- and In<sub>2</sub>S<sub>3</sub>-buffered cells. The explanation, supported by simulations, is based on a model of a reduction of the p + layer by holes photogenerated in the buffer. This effect might be differentiated from the effect of a photosensitive secondary barrier in the buffer-window part of the junction by a sign of the capacitance change under blue light.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Solar cell</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Célula solar</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Capacité électrique</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Capacitance</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Capacitancia</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Simulation numérique</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Numerical simulation</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Simulación numérica</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Séléniure de gallium</s0><s2>NK</s2><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Gallium selenides</s0><s2>NK</s2><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Séléniure d'indium</s0><s2>NK</s2><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Cuivre</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Copper</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Cobre</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Gallium</s0><s2>NC</s2><s2>FX</s2><s5>16</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Gallium</s0><s2>NC</s2><s2>FX</s2><s5>16</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Galio</s0><s2>NC</s2><s2>FX</s2><s5>16</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Sulfure de cadmium</s0><s5>17</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Cadmium sulfide</s0><s5>17</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Cadmio sulfuro</s0><s5>17</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Sulfure d'indium</s0><s5>18</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Indium sulfide</s0><s5>18</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Indio sulfuro</s0><s5>18</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Séléniure de cuivre</s0><s2>NK</s2><s5>19</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Copper selenides</s0><s2>NK</s2><s5>19</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>CdS</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>In2S3</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>8460J</s0><s4>INC</s4><s5>71</s5></fC03><fN21><s1>210</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>E-MRS Spring Meeting 2012. 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